IC SDRAM DDR4-2666 4Gbit 512Mx8 Samsung 1,2V FBGA-78ball I-TEMP

Product number:
AK4A4G085WF-BITD0CV
EAN:
Manufacturer no.:
K4A4G085WF-BITD0CV

Price on request

Product information "IC SDRAM DDR4-2666 4Gbit 512Mx8 Samsung 1,2V FBGA-78ball I-TEMP"
CL19, RoHS Compliant (Lead-Free&Halogen-Free) industrial temperature grade -40°C to +85°C (95°C) Tray 1120pcs CV-Bucket - Enhance Test Coverage
Applikation: Embedded / Industrial
Kapazität: 4 Gbit
Chiphersteller: Samsung
Chiporganisation: 512Mx8
Latenzzeit: CL19
VPE: Tray
Gehäuse: FBGA-78ball
Menge: 1120
Gewährleistung: 2
RoHS-Konform: Ja
Geschwindigkeit: 2666 MHz
Technologie: IC SDRAM DDR4
Temperaturbereich: -40°C to 85/95
Versorgungsspannung: 1,5V

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