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Product information "Industrie SO-DIMM 8GB DDR3-1866 CL11 (512Mx8) (1,35/1,5V) DR"

204pin, DR, 1,35/1,5V, Samsung IC: K4B4G0846E-BYMA OPERATING TEMP 0 C to +95 C STORAGE TEMP -40 C to +95 C Pb-free ROHS, Warranty 2Y
Module configuration: 16
Capacity: 8GB
Chip manufacturer: Samsung K4B4G0846E-BYMA
Chip organization: 512Mx8
Data Integrity Check: non-ECC
Form factor: SO-DIMM 204pin
Speed: DDR3-1866 (PC3-14900)
Warranty: 2
ISO9001: ISO9001
Jedec-Norm: Jedec-Norm
Latency: CL11
Module manufacturer: Memorysolution
Module configuration: 1GBx64
Module dimensions: 67,6 x 30,0 x 3,6
Operating Temperature: 0°C to +85/+95
RAM-Features: unbuffered
Technology: DDR3 SDRAM SODIMM
Temperature grade: Commercial
Type: Notebookspeicher
Supply voltage: 1.35